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This completely reorganized edition of the classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. Integrates nearly 1,000 references to important original research papers and review articles, more than 650 high-quality technical illustrations, and 25 tables of material parameters for device analysis.

Tabla de contenidos provista por Syndetics

• Introduction
• Part I Semiconductor Physics
• Chapter 1 Physics and Properties of Semiconductors-A Review
• 1.1 Introduction
• 1.2 Crystal Structure
• 1.3 Energy Bands and Energy Gap
• 1.4 Carrier Concentration at Thermal Equilibrium
• 1.5 Carrier-Transport Phenomena
• 1.6 Phonon, Optical, and Thermal Properties
• 1.7 Heterojunctions and Nanostructures
• 1.8 Basic Equations and Examples
• Part II Device Building Blocks
• Chapter 2 p-n Junctions
• 2.1 Introduction
• 2.2 Depletion Region
• 2.3 Current-Voltage Characteristics
• 2.4 Junction Breakdown
• 2.5 Transient Behavior and Noise
• 2.6 Terminal Functions
• 2.7 Heterojunctions
• Chapter 3 Metal-Semiconductor Contacts
• 3.1 Introduction
• 3.2 Formation of Barrier
• 3.3 Current Transport Processes
• 3.4 Measurement of Barrier Height
• 3.5 Device Structures
• 3.6 Ohmic Contact
• Chapter 4 Metal-Insulator-Semiconductor Capacitors
• 4.1 Introduction
• 4.2 Ideal MIS Capacitor
• 4.3 Silicon MOS Capacitor
• Part III Transistors
• Chapter 5 Bipolar Transistors
• 5.1 Introduction
• 5.2 Static Characteristics
• 5.3 Microwave Characteristics
• 5.4 Related Device Structures
• 5.5 Heterojunction Bipolar Transistor
• Chapter 6 MOSFETS
• 6.1 Introduction
• 6.2 Basic Device Characteristics
• 6.3 Nonuniform Doping and Buried-Channel Device
• 6.4 Device Scaling and Short-Channel Effects
• 6.5 MOSFET Structures
• 6.6 Circuit Applications
• 6.7 Nonvolatile Memory Devices
• 6.8 Single-Electron Transistor
• Chapter 7 JFETs, MESFETs, and MODFETs
• 7.1 Introduction
• 7.2 JFET and MESFET
• 7.3 MODFET
• Part IV Negative-Resistance and Power Devices
• Chapter 8 Tunnel Devices
• 8.1 Introduction
• 8.2 Tunnel Diode
• 8.3 Related Tunnel Devices
• 8.4 Resonant-Tunneling Diode
• Chapter 9 IMPATT Diodes
• 9.1 Introduction
• 9.2 Static Characteristics
• 9.3 Dynamic Characteristics
• 9.4 Power and Efficiency
• 9.5 Noise Behavior
• 9.6 Device Design and Performance
• 9.7 BARITT Diode
• 9.8 TUNNETT Diode
• Chapter 10 Transferred-Electron and Real-Space-Transfer Devices
• 10.1 Introduction
• 10.2 Transferred-Electron Device
• 10.3 Real-Space-Transfer Devices
• Chapter 11 Thyristors and Power Devices
• 11.1 Introduction
• 11.2 Thyristor Characteristics
• 11.3 Thyristor Variations
• 11.4 Other Power Devices
• Part V Photonic Devices and Sensors
• Chapter 12 LEDs and Lasers
• 12.1 Introduction
• 12.2 Radiative Transitions
• 12.3 Light-Emitting Diode (LED)
• 12.4 Laser Physics
• 12.5 Laser Operating Characteristics
• 12.6 Specialty Lasers
• Chapter 13 Photodetectors and Solar Cells
• 13.1 Introduction
• 13.2 Photoconductor
• 13.3 Photodiodes
• 13.4 Avalanche Photodiode
• 13.5 Phototransistor
• 13.6 Charge-Coupled Device (CCD)
• 13.7 Metal-Semiconductor-Metal Photodetector
• 13.8 Quantum-Well Infrared Photodetector
• 13.9 Solar Cell
• Chapter 14 Sensors
• 14.1 Introduction
• 14.2 Thermal Sensors
• 14.3 Mechanical Sensors
• 14.4 Magnetic Sensors
• 14.5 Chemical Sensors
• Appendixes
• A List of Symbols
• B International System of Units
• C Unit Prefixes
• D Greek Alphabet
• E Physical Constants
• F Properties of Important Semiconductors
• G Properties of Si and GaAs
• H Properties of SiO, and Si3N
• Index